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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU626A DESCRIPTION *With TO-3 package *Short switching times. *High dielectric strength. APPLICATIONS *For use in power supply units of TV receives. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 400 7 10 15 100 175 -65~175 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.5 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain Transition frequency Fall time CONDITIONS IC=50mA; IB=0; IE=10mA; IC=0; IC=8A;IB=2.5 A IC=8A;IB=2.5 A VCE=1000V;VBE=0 IC=10A ; VCE=1.5V IC=2.5A ; VCE=10V IC=0.1A ; VCE=10V IC=8A;IB1=-IB2=2.5A; 10 15 6 MIN 400 7 TYP. BU626A SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICES hFE-1 hFE-2 fT tf MAX UNIT V V 3.3 2.2 1.0 V V mA MHz 1 s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU626A Fig.2 Outline dimensions 3 |
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